MMBT3904WT1G

The MMBT3904WT1G is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This compact transistor is widely used in consumer electronics, telecommunications, and industrial circuits due to its reliability and versatility.

Key Features:

• High Speed: Capable of fast switching speeds, making it suitable for applications requiring rapid response times.
• Low Collector-Emitter Saturation Voltage: Offers a low VCE(sat), ensuring efficient operation and minimizing power loss during switching.
• Wide Voltage Range: Rated for a maximum collector-emitter voltage (VCE) of 40V, providing flexibility for various circuit designs.
• High Current Gain: Delivers a high DC current gain (hFE), enabling effective amplification in low-power applications.
• Compact Package: Available in a small SOT-23 package, allowing for space-efficient designs in compact electronic devices.

Applications:

• Signal Amplification: Used in audio and RF signal amplification circuits.
• Switching Applications: Ideal for low-power switching applications in consumer electronics and automotive systems.
• Driver Circuits: Suitable for driving small motors, relays, and other components in various electronic applications.

The MMBT3904WT1G is a versatile and reliable NPN transistor, making it a popular choice for engineers designing a wide range of electronic circuits.