MMBT3904

1. Type:
   • NPN Bipolar Junction Transistor (BJT).
2. Voltage and Current Ratings:
   • Collector-Emitter Voltage (Vce): 40V.
   • Collector Current (Ic): 200 mA, suitable for low-power switching and signal amplification applications.
3. Gain:
   • The transistor has a typical DC current gain (hFE) ranging from 100 to 300, enabling effective signal amplification.
4. Power Dissipation:
   • Maximum power dissipation of 225 mW, ensuring reliable performance in low-power circuits.
5. Package:
   • Available in the SOT-23 surface-mount package, offering a compact form factor ideal for space-constrained applications.
6. Switching Speed:
   • High switching speed, making it suitable for digital logic, signal processing, and other high-speed applications.
7. Applications:
   • Commonly used for general-purpose switching, signal amplification, and logic-level shifting in low-power circuits such as audio amplifiers, signal modulators, and digital control systems.
8. Operating Temperature Range:
   • Operates in a wide temperature range from -55°C to +150°C, ensuring reliability under varying environmental conditions.

The MMBT3904 NPN transistor is an efficient and reliable solution for low-power switching and amplification tasks, widely used in modern electronic circuits.