IRFP4468PBF

1. Type:
   • N-channel MOSFET optimized for high-efficiency power switching.
2. Voltage Rating:
   • 120V maximum drain-to-source voltage (V_DS), suitable for medium-to-high voltage applications.
3. Current Rating:
   • Capable of handling up to 94A continuous drain current, providing robust performance for high-current applications.
4. On-Resistance:
   • Low R_DS(on) of 0.028 Ω (typical), which minimizes conduction losses and improves overall efficiency.
5. Gate Charge:
   • Total gate charge of 200 nC, allowing efficient switching with manageable drive requirements.
6. Switching Speed:
   • Designed for fast switching, making it suitable for high-frequency applications.
7. Package:
   • Housed in a TO-247 package, which offers effective heat dissipation and ease of integration into various circuit designs.
8. Applications:
   • Ideal for use in power supplies, motor drives, DC-DC converters, and other high-power management applications where high-current and low on-resistance MOSFETs are required.

The IRFP4468PBF provides high performance with its low on-resistance, high current capability, and efficient switching characteristics, making it a versatile choice for demanding power electronics applications.