IRF9Z34NSTRLPBF

1. Type:
   • P-channel MOSFET optimized for high-voltage power switching.
2. Voltage Rating:
   • 55V maximum drain-to-source voltage (V_DS), suitable for medium-voltage applications.
3. Current Rating:
   • Capable of handling up to 9A continuous drain current, providing robust performance in high-current applications.
4. On-Resistance:
   • Low R_DS(on) of 0.05 Ω (typical), which reduces conduction losses and improves efficiency.
5. Gate Charge:
   • Total gate charge of 40 nC, balancing efficient switching with manageable drive requirements.
6. Switching Speed:
   • Designed for fast switching, making it suitable for high-frequency applications.
7. Package:
   • Housed in a D2PAK package, which offers effective heat dissipation and a compact form factor for ease of integration.
8. Applications:
   • Ideal for use in power management circuits, motor drives, and other high-voltage switching applications where a high-current and low on-resistance MOSFET is required.

The IRF9Z34NSTRLPBF combines high-voltage capability, low on-resistance, and efficient switching characteristics, making it a versatile choice for demanding power electronics applications.