IRF9Z34NSTRLPBF

The IRF9Z34NSTRLPBF is a P-channel MOSFET designed for efficient switching in high-voltage applications. Here’s a detailed description:

• Type: P-Channel Power MOSFET.
• Drain-Source Voltage (Vds): Rated at -55V, suitable for high-voltage applications where negative voltage is required.
• Continuous Drain Current (Id): Handles up to -19A, providing substantial current handling capability for various power circuits.
• Rds(on): Low on-resistance of approximately 0.14 ohms (at Vgs = -10V), which reduces conduction losses and improves efficiency.
• Gate Charge: Moderate gate charge (typically around 80 nC), supporting efficient switching performance.
• Package: Available in an SO-8 package, which is compact and suitable for space-constrained applications.
• Applications: Ideal for use in power supplies, motor drivers, and other high-voltage switching applications where P-channel MOSFETs are required.
• Features:
  • Fast Switching: Designed for efficient high-speed switching.
  • Thermal Management: The SO-8 package provides good thermal performance and allows for effective heat dissipation.

The IRF9Z34NSTRLPBF is engineered to deliver high performance in high-voltage P-channel switching applications, with low on-resistance and efficient thermal management in a compact SO-8 package.