Manufacturer |
Vishay |
RoHS |
Details |
Technology |
Si |
Mounting Style |
Through Hole |
Package / Case |
TO-220AB-3 |
Transistor Polarity |
N-Channel |
Number of Channels |
1 Channel |
Vds – Drain-Source Breakdown Voltage |
500 V |
Id – Continuous Drain Current |
8 A |
Rds On – Drain-Source Resistance |
850 mOhms |
Vgs – Gate-Source Voltage |
– 20 V, + 20 V |
Vgs th – Gate-Source Threshold Voltage |
4 V |
Qg – Gate Charge |
63 nC |
Minimum Operating Temperature |
– 55 C |
Maximum Operating Temperature |
+ 150 C |
Pd – Power Dissipation |
125 W |
Channel Mode |
Enhancement |
Brand |
Vishay Semiconductors |
Configuration |
Single |
Fall Time |
20 ns |
Product Type |
MOSFET |
Rise Time |
23 ns |
Series |
IRF |
Factory Pack Quantity |
1000 |
Subcategory |
MOSFETs |
Transistor Type |
1 N-Channel |
Typical Turn-Off Delay Time |
49 ns |
Typical Turn-On Delay Time |
14 ns |
Part # Aliases |
IRF840PBF-BE3 SIHF840-E3 |
Unit Weight |
0.068784 oz |