Manufacturer |
Infineon |
RoHS |
Details |
Technology |
Si |
Mounting Style |
Through Hole |
Package / Case |
TO-220-3 |
Transistor Polarity |
N-Channel |
Number of Channels |
1 Channel |
Vds – Drain-Source Breakdown Voltage |
100 V |
Id – Continuous Drain Current |
57 A |
Rds On – Drain-Source Resistance |
23 mOhms |
Vgs – Gate-Source Voltage |
– 20 V, + 20 V |
Vgs th – Gate-Source Threshold Voltage |
4 V |
Qg – Gate Charge |
86.7 nC |
Minimum Operating Temperature |
– 55 C |
Maximum Operating Temperature |
+ 175 C |
Pd – Power Dissipation |
200 W |
Channel Mode |
Enhancement |
Brand |
Infineon / IR |
Configuration |
Single |
Product Type |
MOSFET |
Factory Pack Quantity |
1000 |
Subcategory |
MOSFETs |
Transistor Type |
1 N-Channel |
Part # Aliases |
IRF3710PBF SP001551058 |
Unit Weight |
0.068784 oz |
Length |
10 mm |
Width |
4.4 mm |
Height |
15.65 mm |