IR2101STRPBF

The IR2101STRPBF is a high- and low-side driver IC designed for driving MOSFETs and IGBTs in half-bridge and full-bridge configurations. Here’s a detailed description:

• Type: High- and Low-Side Gate Driver IC.
• Voltage Rating: Operates with a maximum high-side voltage of up to 600V, suitable for high-voltage power switching applications.
• Current Drive: Provides peak output currents of 2.5A for sourcing and 2.5A for sinking, ensuring efficient gate drive for power transistors.
• Propagation Delay: Low propagation delay of around 300ns, enabling fast switching and improving system performance.
• Bootstrap Circuitry: Includes integrated bootstrap diodes, simplifying the design and reducing component count in high-side driving circuits.
• Protection Features: Features under-voltage lockout (UVLO) for both high- and low-side drivers, which protects against low supply voltages and ensures reliable operation.
• Package: Available in an 8-pin SOIC package for surface mounting, providing compact integration into electronic designs.
• Applications: Suitable for motor drives, DC-DC converters, and other high-voltage power management systems where precise control of high-side and low-side switching is required.

The IR2101STRPBF is designed to deliver reliable and efficient gate drive control for high-voltage power switches, with integrated protection features and fast switching capabilities for demanding power applications.