IPW65R110CFD

The IPW65R110CFD is an N-channel MOSFET designed for high-efficiency power switching applications. Here’s a detailed description:

• Type: N-Channel Power MOSFET.
• Drain-Source Voltage (Vds): Rated at 650V, suitable for high-voltage switching applications.
• Continuous Drain Current (Id): Capable of handling up to 65A, making it ideal for high-current applications.
• Rds(on): Low on-resistance (typically 0.11 ohms at Vgs = 10V), which reduces conduction losses and improves efficiency.
• Gate Charge: Low gate charge of approximately 140 nC ensures efficient switching with minimal power loss.
• Package: Available in a TO-247 package, providing robust thermal management and ease of mounting in power circuits.
• Applications: Suitable for use in power supplies, motor drives, induction heating, and other high-voltage, high-current applications requiring efficient power switching.
• Features:
  • Fast Switching: Designed for high-speed switching, enhancing overall system performance.
  • Enhanced Avalanche Rating: Provides reliable operation in environments with high-energy transients.

The IPW65R110CFD is engineered to deliver high efficiency and reliability in demanding power electronics applications, offering robust performance with low on-resistance and efficient switching characteristics.