IPB120N04S4-02

The IPB120N04S4-02 is a high-performance N-channel MOSFET designed for efficient power switching applications. It provides a balance of low on-resistance, high current capacity, and fast switching speeds. Key features include:

1. Type:
   • N-channel MOSFET suitable for high-efficiency power switching.
2. Voltage Rating:
   • 40V maximum drain-to-source voltage (V_DS), making it ideal for low to medium voltage applications.
3. Current Rating:
   • Capable of handling up to 120A continuous drain current, ensuring robust performance for high-current tasks.
4. On-Resistance:
   • Low R_DS(on) of 2.8 mΩ, which helps to minimize conduction losses and improve overall power efficiency.
5. Switching Speed:
   • Fast switching capabilities that enhance performance in high-frequency applications.
6. Gate Charge:
   • Low total gate charge of 45 nC, which reduces the power needed to drive the gate and improves switching efficiency.
7. Package:
   • Available in a D2PAK package, which offers effective thermal management and high power dissipation.
8. Applications:
   • Ideal for power supplies, DC-DC converters, motor drives, and other applications requiring high-current and high-efficiency switching.

The IPB120N04S4-02 delivers high current handling, low on-resistance, and efficient switching performance, making it a versatile choice for various power management and switching applications.