HGTG30N60A4D

The HGTG30N60A4D is an IGBT (Insulated Gate Bipolar Transistor) designed by Fairchild Semiconductor, now part of ON Semiconductor. Here’s a brief description of its key features and specifications:

1. Type: IGBT (Insulated Gate Bipolar Transistor)
2. Voltage Rating:
   • Collector-emitter voltage (Vces): 600V
3. Current Rating:
   • Collector current (Ic): 60A
4. Package Type: TO-247
5. Applications:
   • Motor control
   • Inverters
   • Power supplies
   • Industrial applications requiring high voltage and current handling capabilities
6. Features:
   • High-speed switching
   • Low saturation voltage
   • Avalanche rated
7. Benefits:
   • Efficient power management
   • Reliable performance in high-power applications

The HGTG30N60A4D IGBT is suitable for various high-power switching applications where efficiency and reliability are critical.

If you need more detailed technical specifications or have specific questions about its usage, feel free to ask!