FM25V02A-GTR

The FM25V02A-GTR is a high-performance non-volatile ferroelectric RAM (F-RAM) memory device from Infineon Technologies. It offers fast access, low power consumption, and unlimited endurance for data storage applications. Here are its key features:

1. Memory Type:
   • 256Kb F-RAM (Ferroelectric RAM), providing non-volatile memory with fast write speeds and virtually unlimited write endurance.
2. Density:
   • 32KB (256 Kbits) organized as 4,096 × 8 bits.
3. Speed:
   • Operates with SPI interface, supporting clock speeds up to 40 MHz for high-speed data access.
4. Data Retention:
   • Non-volatile memory with a 100-year data retention capability, making it highly reliable for long-term data storage.
5. Endurance:
   • Unlimited write endurance, far exceeding traditional non-volatile memory technologies like EEPROM or Flash.
6. Operating Voltage:
   • Wide operating voltage range from 2.0V to 3.6V, suitable for low-power applications.
7. Low Power:
   • Consumes minimal power in both active and standby modes, making it ideal for battery-powered devices.
8. Package:
   • Available in a 8-pin TDFN package, offering a compact and reliable solution for space-constrained applications.
9. Applications:
   • Ideal for use in metering, industrial controls, medical devices, and any application requiring reliable and fast non-volatile data storage.

The FM25V02A-GTR offers high-speed, low-power, and highly reliable non-volatile memory, making it a superior choice for applications requiring fast write speeds and long-term data retention.