Manufacturer |
Diodes Incorporated |
RoHS |
Details |
Technology |
Si |
Mounting Style |
SMD/SMT |
Package / Case |
SOT-23-3 |
Transistor Polarity |
N-Channel |
Number of Channels |
1 Channel |
Vds – Drain-Source Breakdown Voltage |
30 V |
Id – Continuous Drain Current |
3.8 A |
Rds On – Drain-Source Resistance |
54 mOhms |
Vgs – Gate-Source Voltage |
– 12 V, + 12 V |
Vgs th – Gate-Source Threshold Voltage |
620 mV |
Qg – Gate Charge |
8.2 nC |
Minimum Operating Temperature |
– 55 C |
Maximum Operating Temperature |
+ 150 C |
Pd – Power Dissipation |
1.4 W |
Channel Mode |
Enhancement |
Brand |
Diodes Incorporated |
Configuration |
Single |
Fall Time |
3.26 ns |
Product Type |
MOSFET |
Rise Time |
3.49 ns |
Series |
DMN3150 |
Factory Pack Quantity |
3000 |
Subcategory |
MOSFETs |
Transistor Type |
1 N-Channel |
Typical Turn-Off Delay Time |
15.02 ns |
Typical Turn-On Delay Time |
1.14 ns |
Unit Weight |
0.000282 oz |
Length |
2.9 mm |
Width |
1.3 mm |
Height |
1 mm |