CY8C4126AZI-M475

The BSC190N15NS3 G is a high-performance N-channel MOSFET designed for efficient switching in power electronics applications. Here are its key features:

1. Type:
   • N-Channel MOSFET.
2. Voltage Rating:
   • 150V maximum drain-to-source voltage (V_DS), suitable for high-voltage applications.
3. Current Rating:
   • 190A continuous drain current (I_D), providing high current handling capability.
4. R_DS(on):
   • Low on-resistance of 3.3 mΩ (typical), ensuring minimal power loss during conduction and efficient performance.
5. Gate Charge:
   • High-speed switching with a total gate charge (Q_g) of 280 nC (typical), enabling efficient operation at high frequencies.
6. Package:
   • Available in an H²PAK-6 package, which provides a robust design for heat dissipation and compact mounting.
7. Thermal Characteristics:
   • Designed to handle high power dissipation with a maximum junction temperature of 175°C, ensuring reliable performance in demanding conditions.
8. Applications:
   • Suitable for use in power supplies, motor drives, and other high-current and high-voltage switching applications.

The BSC190N15NS3 G MOSFET offers high current capability, low on-resistance, and efficient switching performance, making it ideal for demanding power management applications.