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BSS308PE H6327

Manufacturer Part Number: BSS308PE H6327 Manufacturer / Brand: Infineon
Part of Description: MOSFET P-Ch -30V -2A SOT-23-3 Lead Free Status / RoHS Status: table_img Lead free / RoHS Compliant
Ship From: HK/Shen Zhen Shipment Way: DHL/Fedex/TNT/UPS

Product parameters BSS308PE H6327

Manufacturer Infineon
RoHS Details
Technology Si
Mounting Style SMD/SMT
Package / Case SOT-23-3
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds – Drain-Source Breakdown Voltage 30 V
Id – Continuous Drain Current 2 A
Rds On – Drain-Source Resistance 62 mOhms
Vgs – Gate-Source Voltage – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage 2 V
Qg – Gate Charge 5 nC
Minimum Operating Temperature – 55 C
Maximum Operating Temperature + 150 C
Pd – Power Dissipation 500 mW
Channel Mode Enhancement
Brand Infineon Technologies
Configuration Single
Fall Time 2.8 ns
Product Type MOSFET
Rise Time 7.7 ns
Series BSS308
Factory Pack Quantity 9000
Subcategory MOSFETs
Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 15.3 ns
Typical Turn-On Delay Time 5.6 ns
Part # Aliases BSS38PEH6327XT SP000928942 BSS308PEH6327XTSA1
Unit Weight 0.000282 oz
Length 2.9 mm
Width 1.3 mm
Height 1.1 mm
Qualification AEC-Q101

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