BSP52T1G

Key Features:

• Type: N-channel MOSFET for efficient switching and amplification.
• Drain-Source Voltage (Vds): 60V, capable of handling moderate voltage levels.
• Continuous Drain Current (Id): Up to 500 mA, suitable for a variety of low-power applications.
• Rds(on): Low on-resistance, typically around 0.6Ω at Vgs = 10V, ensuring minimal power loss during operation.
• Gate Threshold Voltage (Vgs(th)): Ranges from 1.0V to 3.0V, allowing for compatibility with low-voltage control signals.
• Package: Available in a compact SOT-23 package, ideal for space-constrained designs.
• Fast Switching Speed: Optimized for high-speed applications, making it suitable for digital and analog circuits.

Typical Applications:

• Switching Circuits: Used in load switching for battery-operated devices.
• Signal Amplification: Employed for amplifying signals in various electronic applications.
• Level Shifting: Suitable for voltage level shifting in digital circuits.
• Consumer Electronics: Commonly found in smartphones, tablets, and other electronic devices.

The BSP52T1G is valued for its compact size, efficient performance, and versatility, making it an excellent choice for modern electronic designs.