BSP52T1G

The BSP52T1G is a high-voltage NPN bipolar junction transistor (BJT) from ON Semiconductor, designed for various switching and amplification applications. It is suitable for use in both linear and digital circuits. Here’s a detailed description:

Description:

• Type: NPN Bipolar Junction Transistor
• Manufacturer: ON Semiconductor
• Package: SOT-23 (Small Outline Transistor, 3 pins)
• Voltage Rating: Collector-Emitter Voltage (Vce) up to 60V
• Current Rating: Collector Current (Ic) up to 500 mA
• Gain: High current gain (hFE) range typically from 100 to 300, depending on the collector current.

Key Features:

• High Voltage: Capable of handling high voltages up to 60V, making it suitable for various applications requiring robust performance.
• Compact Package: SOT-23 package provides a small footprint for space-constrained designs.
• Low Saturation Voltage: Ensures efficient operation in switching applications by minimizing power loss.
• Wide Frequency Response: Suitable for RF and high-frequency applications due to its fast switching characteristics.
• Thermal Stability: Designed to operate reliably over a wide temperature range.

Applications:

• Switching Circuits: Ideal for low to medium power switching applications, including relay and motor control.
• Amplifiers: Can be used in linear amplifier circuits for audio and RF applications.
• Signal Processing: Suitable for various signal processing tasks in consumer electronics.
• LED Drivers: Often used to drive LEDs in lighting applications.

Package Dimensions:

• SOT-23: A small surface-mount package that is easy to integrate into printed circuit boards (PCBs) and suitable for high-density applications.

Reference Documents:

For detailed technical specifications, application circuits, and design guidelines, refer to the BSP52T1G datasheet provided by ON Semiconductor, available on their official website.