BAT54SLT1G

The BAT54SLT1G is a dual N-channel MOSFET designed for low-voltage, low-power switching applications, commonly used in various electronic circuits.

Key Features:

• Type: Dual N-channel MOSFET, providing two separate transistors in a single package for efficient circuit design.
• Drain-Source Voltage (Vds): 30V, allowing it to handle moderate voltage levels suitable for many applications.
• Drain Current (Id): 200 mA per channel, making it suitable for low-power switching tasks.
• Rds(on): Low on-resistance, typically around 1.0Ω at Vgs = 10V, ensuring minimal power loss during operation.
• Gate Threshold Voltage (Vgs(th)): Typically 1-3V, enabling easy control with standard logic level signals.
• Package: SOT-23, a compact, surface-mount package ideal for space-constrained designs.
• Fast Switching Speed: Designed for high-speed switching applications, making it suitable for various digital and analog circuits.

Typical Applications:

• Switching Circuits: Used in low-voltage switching applications, including load switching in battery-powered devices.
• Signal Routing: Employed in signal routing applications, where quick switching is essential.
• Level Shifting: Useful for shifting voltage levels in digital circuits, enabling compatibility between different logic levels.
• Consumer Electronics: Commonly found in smartphones, tablets, and other consumer electronic devices for various switching applications.

The BAT54SLT1G is recognized for its compact size, low power loss, and efficient performance, making it an excellent choice for low-voltage switching applications in a wide range of electronic devices.